A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature

In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when hyperbolic two-temperature theory two-dimensional (2D) deformation taken into account. Shear (purely transverse) are dissociated from remainder motion and remain unaffected by external fields. The coupled system partial differential equations main interacting fields has been solved. Using Laplace transform method, governing heat conduction can be formulated 2D. hole charge carrier, displacement, thermal, plasma boundary conditions applied on interface adjacent to vacuum obtain basic physical quantities domain. inversion with numerical method complete solutions time domain for under investigation. effects thermoelastic, phase-lag temperature gradient flux, parameter, comparing between silicon germanium displacement component, carrier density, distribution have discussed obtained graphically.